The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access
Varlachev, V A, Golovatsky, A V, Emets, E G, Butko, Ya AVolume:
135
Language:
english
Journal:
IOP Conference Series: Materials Science and Engineering
DOI:
10.1088/1757-899X/135/1/012047
Date:
June, 2016
File:
PDF, 981 KB
english, 2016