Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer...

Materials Science Forum 2017 / 5 Vol. 897

Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device

Anzalone, Ruggero, Piluso, Nicolò, Salanitri, Marco, Lorenti, Simona, Arena, G., Coffa, Salvatore
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Volume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.897.71
Date:
May, 2017
File:
PDF, 618 KB
english, 2017
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