Electrical Stability Impact of Gate Oxide in Channel...

Materials Science Forum 2017 / 5 Vol. 897

Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

Idris, Muhammad I., Weng, Ming Hung, Chan, H.K., Murphy, A.E., Smith, Dave A., Young, R.A.R., Ramsay, Ewan P., Clark, David T., Wright, Nick G., Horsfall, Alton B.
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Volume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.897.513
Date:
May, 2017
File:
PDF, 500 KB
english, 2017
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