Tunneling current characteristics by Al+N isoelectronic...

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Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study

Iizuka, Shota, Asayama, Yoshihiro, Nakayama, Takashi
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Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.11.031
Date:
December, 2016
File:
PDF, 440 KB
english, 2016
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