![](/img/cover-not-exists.png)
Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study
Iizuka, Shota, Asayama, Yoshihiro, Nakayama, TakashiLanguage:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.11.031
Date:
December, 2016
File:
PDF, 440 KB
english, 2016