Failure mechanism analysis of off-state drain-to-source...

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Microelectronics Reliability 2017 / 7

Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test

Song, S., Munk-Nielsen, S., Uhrenfeldt, C.
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Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.07.011
Date:
July, 2017
File:
PDF, 1.22 MB
english, 2017
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