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[IEEE 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Athens, Greece (2017.4.3-2017.4.5)] 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices
Horst, Fabian, Graef, Michael, Hosenfeld, Fabian, Farokhnejad, Atieh, Luong, Gia Vinh, Zhao, Qing-Tai, Iniguez, Benjamin, Kloes, AlexanderYear:
2017
Language:
english
DOI:
10.1109/ULIS.2017.7962595
File:
PDF, 1.78 MB
english, 2017