P-15: Prediction Method of Device Instability in a-InGaZnO...

SID Symposium Digest of Technical Papers 2017 / 05 Vol. 48; Iss. 1

P-15: Prediction Method of Device Instability in a-InGaZnO TFTs under Positive Gate Biases and Thermal Stresses using TCAD Simulation

Kim, Jin-young, Tak, Nam-kyun, Choi, Jin-hyung, Lee, Won-seok, Cho, Won-ju, Park, Jong-tae
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Volume:
48
Language:
english
Journal:
SID Symposium Digest of Technical Papers
DOI:
10.1002/sdtp.11869
Date:
May, 2017
File:
PDF, 1.31 MB
english, 2017
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