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Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability
Li, Weiyi, Zhang, Zhili, Fu, Kai, Yu, Guohao, Zhang, Xiaodong, Sun, Shichuang, Song, Liang, Hao, Ronghui, Fan, Yaming, Cai, Yong, Zhang, BaoshunVolume:
38
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/38/7/074001
Date:
July, 2017
File:
PDF, 6.56 MB
english, 2017