Origin analysis of expanded stacking faults by applying...

Applied Physics Express 2017 / 08 Vol. 10; Iss. 8

Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes

Hayashi, Shohei, Naijo, Takanori, Yamashita, Tamotsu, Miyazato, Masaki, Ryo, Mina, Fujisawa, Hiroyuki, Miyajima, Masaaki, Senzaki, Junji, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumur
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Volume:
10
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.10.081201
Date:
August, 2017
File:
PDF, 865 KB
english, 2017
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