Improving source/drain contact resistance of amorphous...

Japanese Journal of Applied Physics 2016 / 06 Vol. 55; Iss. 6S1

Improving source/drain contact resistance of amorphous indium–gallium–zinc-oxide thin-film transistors using an n + -ZnO buffer layer

Hung, Chien-Hsiung, Wang, Shui-Jinn, Lin, Chieh, Wu, Chien-Hung, Chen, Yen-Han, Liu, Pang-Yi, Tu, Yung-Chun, Lin, Tseng-Hsing
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.06GG05
Date:
June, 2016
File:
PDF, 1.80 MB
english, 2016
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