Reduced Junction Leakage by Hot Phosphorus Ion Implantation...

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IEEE Electron Device Letters 2017

Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-contacted Germanium n+/p Shallow Junction

Chen, Yi-Ju, Tsui, Bing-Yue, Chou, Hung-Ju, Li, Ching-I, Lin, Ger-Pin, Hu, Shao-Yu
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2726086
File:
PDF, 445 KB
english, 2017
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