All solid source molecular beam epitaxy growth of 1.35 µm...

Electronics Letters 1995 / 05 Vol. 31; Iss. 10

All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

Toivonen, M., Näppi, J., Salokatve, A., Pessa, M., Jalonen, M., Asonen, H., Murison, R.
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Volume:
31
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19950526
Date:
May, 1995
File:
PDF, 321 KB
english, 1995
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