A 173 GHz Amplifier With a 18.5 dB Power Gain in a 130 nm...

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IEEE Transactions on Microwave Theory and Techniques 2017

A 173 GHz Amplifier With a 18.5 dB Power Gain in a 130 nm SiGe Process: A Systematic Design of High-Gain Amplifiers Above fmax/2

Khatibi, Hamid, Khiyabani, Somayeh, Afshari, Ehsan
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Year:
2017
Language:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/TMTT.2017.2727038
File:
PDF, 8.04 MB
english, 2017
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