A Deep Insight into the Degradation of 1.2kV 4H-SiC MOSFETs...

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IEEE Transactions on Power Electronics 2017

A Deep Insight into the Degradation of 1.2kV 4H-SiC MOSFETs under Repetitive Unclamped Inductive Switching Stresses

Zhou, Xintian, Su, Hongyuan, Yue, Ruifeng, Dai, Gang, Li, Juntao, Wang, Yan, Yu, Zhiping
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Year:
2017
Language:
english
Journal:
IEEE Transactions on Power Electronics
DOI:
10.1109/tpel.2017.2730259
File:
PDF, 2.92 MB
english, 2017
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