Multi-resonant gate drive circuit of isolating-gate GaN...

IET Circuits Devices & Systems 2017 / 05 Vol. 11; Iss. 3

Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz

Hattori, Fumiya, Umegami, Hirokatsu, Yamamoto, Masayoshi
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Volume:
11
Language:
english
Journal:
IET Circuits, Devices & Systems
DOI:
10.1049/iet-cds.2016.0244
Date:
May, 2017
File:
PDF, 3.56 MB
english, 2017
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