[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Design considerations of vertical GaN nanowire Schottky barrier diodes
Sabui, Gourab, Zubialevich, Vitaly Z., White, Mary, Pampili, Pietro, Parbrook, Peter J., McLaren, Mathew, Arredondo-Arechavala, Miryam, Shen, Z. JohnYear:
2017
DOI:
10.23919/ISPSD.2017.7988917
File:
PDF, 865 KB
2017