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[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs
Watanabe, K., Nozaki, M., Yamada, T., Nakazawa, S., Anda, Y., Isliida, M., Ueda, T., Yoshigoe, A., Hosoi, T., Shimura, T., Watanabe, H.Year:
2017
DOI:
10.23919/ISPSD.2017.7988927
File:
PDF, 920 KB
2017