A novel enhancement mode AlGaN/GaN high electron mobility...

Chinese Physics B 2017 / 04 Vol. 26; Iss. 4

A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

Wang, Hui, Wang, Ning, Jiang, Ling-Li, Lin, Xin-Peng, Zhao, Hai-Yue, Yu, Hong-Yu
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Volume:
26
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/26/4/047305
Date:
April, 2017
File:
PDF, 689 KB
english, 2017
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