[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - High power density side-gate HiGT modules with sintered Cu having superior high-temperature reliability to sintered Ag
Furukawa, Tomoyasu, Shiraishi, Masaki, Yasuda, Yuusuke, Konno, Akitoyo, Mori, Mutsuhiro, Morita, Toshiaki, Watanabe, Sou, Arai, Taiga, Nakamura, Masato, Kawase, DaisukeYear:
2017
DOI:
10.23919/ISPSD.2017.7988910
File:
PDF, 646 KB
2017