[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - On the vertical leakage of GaN-on-Si lateral transistors and the effect of emission and trap-to-trap-tunneling through the AIN/Si barrier

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