[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Irace, A., Urresti, J., Wright, N.Year:
2017
DOI:
10.23919/ISPSD.2017.7988986
File:
PDF, 887 KB
2017