Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles
Bag, Ankush, Majumdar, Shubhankar, Das, Subhashis, Biswas, DhrubesLanguage:
english
Journal:
Materials & Design
DOI:
10.1016/j.matdes.2017.07.061
Date:
July, 2017
File:
PDF, 1.96 MB
english, 2017