Single Event Upset rate determination for 65 nm SRAM...

Microelectronics Reliability 2017 / 11 Vol. 78

Single Event Upset rate determination for 65 nm SRAM bit-cell in LEO radiation environments

Sajid, Muhammad, Chechenin, N.G., Torres, Frank Sill, Gulzari, Usman Ali, Butt, Muhammad Usman, Ming, Zhu, Khan, E.U.
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Volume:
78
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.07.084
Date:
November, 2017
File:
PDF, 1.42 MB
english, 2017
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