Oxygen Interstitial Creation in a-IGZO Thin-Film...

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IEEE Electron Device Letters 2017

Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors under Positive Gate-Bias Stress

Zhou, Xiaoliang, Shao, Yang, Zhang, Letao, Lu, Huiling, He, Hongyu, Han, Dedong, Wang, Yi, Zhang, Shengdong
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2723162
File:
PDF, 352 KB
english, 2017
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