Slanted Tri-gates for High-Voltage GaN Power Devices

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IEEE Electron Device Letters 2017

Slanted Tri-gates for High-Voltage GaN Power Devices

Ma, Jun, Matioli, Elison
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2731799
File:
PDF, 1.15 MB
english, 2017
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