Corrigendum: Creation of a two-dimensional electron gas at...

Nature Communications 2013 / 2 Vol. 4

Corrigendum: Creation of a two-dimensional electron gas at an oxide interface on silicon

Park, J. W., Bogorin, D. F., Cen, C., Felker, D. A., Zhang, Y., Nelson, C. T., Bark, C. W., Folkman, C. M., Pan, X. Q., Rzchowski, M. S., Levy, J., Eom, C. B.
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Volume:
4
Language:
english
Journal:
Nature Communications
DOI:
10.1038/ncomms2455
Date:
February, 2013
File:
PDF, 82 KB
english, 2013
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