SiC BJT Compact DC Model With Continuous-Temperature...

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IEEE Transactions on Electron Devices 2017

SiC BJT Compact DC Model With Continuous-Temperature Scalability From 300 to 773 K

Tian, Ye, Hedayati, Raheleh, Zetterling, Carl-Mikael
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Year:
2017
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2730200
File:
PDF, 2.87 MB
english, 2017
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