Design and analysis of 30 nm T-gate InAlN/GaN HEMT with...

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Superlattices and Microstructures 2017 / 8

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

Murugapandiyan, P., Ravimaran, S., William, J., Meenakshi Sundaram, K.
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Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.08.002
Date:
August, 2017
File:
PDF, 1.14 MB
english, 2017
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