Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
Murugapandiyan, P., Ravimaran, S., William, J., Meenakshi Sundaram, K.Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.08.002
Date:
August, 2017
File:
PDF, 1.14 MB
english, 2017