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Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer
Ke, Shaoying, Lin, Shaoming, Ye, Yujie, Mao, Danfeng, Huang, Wei, Xu, Jianfang, Li, Cheng, Chen, SongyanLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa81ee
Date:
July, 2017
File:
PDF, 1.70 MB
english, 2017