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Controlled reactive HiPIMS – effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition
Vlcek, Jaroslav, Kolenatý, David, Houska, Jiri, Kozak, Tomas, Cerstvy, RadomirLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa8356
Date:
August, 2017
File:
PDF, 994 KB
english, 2017