Effect of n-type doping level on direct band gap...

Semiconductor Science and Technology 2017 / 07

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

Maekura, Takayuki, Tanaka, Kentaro, Motoyama, Chisato, Yoneda, Ryota, Yamamoto, Keisuke, Nakashima, Hiroshi, Wang, Dong
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aa827f
Date:
July, 2017
File:
PDF, 497 KB
english, 2017
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