Preparation and effects of O 2...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2017 / 05 Vol. 35; Iss. 3

Preparation and effects of O 2 flow on the electrical characteristics of Li doped MgZnO thin film transistors

Tian, Longjie, Gao, Song, Ma, Yaobin, Wang, Qi, Zhou, Dongzhan, Li, Ran, Zhang, Xiqing, Wang, Yongsheng
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4983086
Date:
May, 2017
File:
PDF, 1.13 MB
english, 2017
Conversion to is in progress
Conversion to is failed