Orbital electronic occupation effect on metal–insulator...

Journal of Physics Condensed Matter 2017 / 09 Vol. 29; Iss. 35

Orbital electronic occupation effect on metal–insulator transition in Ti x V 1− x O 2

Huang, Kang, Meng, Yifan, Xu, XiaoFeng, Chen, Pingping, Lu, Aijiang, Li, Hui, Wu, Binhe, Wang, Chunrui, Chen, Xiaoshuang
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Volume:
29
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/1361-648X/aa7707
Date:
September, 2017
File:
PDF, 2.67 MB
english, 2017
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