500 °C High Current 4H-SiC Lateral BJTs for...

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IEEE Electron Device Letters 2017

500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

Elahipanah, Hossein, Kargarrazi, S., Salemi, A., Ostling, Mikael, Zetterling, Carl-Mikael
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2737558
File:
PDF, 929 KB
english, 2017
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