Band Offset Enhancement of a-Al2O3/Tensile- Ge for High...

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IEEE Electron Device Letters 2017

Band Offset Enhancement of a-Al2O3/Tensile- Ge for High Mobility Nanoscale pMOS Devices

Clavel, Michael B., Hudait, Mantu K.
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2017.2734040
File:
PDF, 912 KB
english, 2017
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