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[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack
Sharma, P., Tapily, K., Saha, A. K., Zhang, J., Shaughnessy, A., Aziz, A., Snider, G. L., Gupta, S., Clark, R. D., Datta, S.Year:
2017
Language:
english
DOI:
10.23919/VLSIT.2017.7998160
File:
PDF, 1.20 MB
english, 2017