Damage effect and mechanism of the GaAs high electron...

Chinese Physics B 2016 / 04 Vol. 25; Iss. 4

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

Liu, Yang, Chai, Chang-Chun, Yang, Yin-Tang, Sun, Jing, Li, Zhi-Peng
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Volume:
25
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/25/4/048504
Date:
April, 2016
File:
PDF, 1.35 MB
english, 2016
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