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Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.
Gonzalez, David, Braza, Verónica, Utrilla, Antonio David, Gonzalo, Alicia, Reyes, Daniel F., Ben, Teresa, Guzman, Alvaro, Hierro, Adrian, Ulloa, José MaríaLanguage:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aa83e2
Date:
August, 2017
File:
PDF, 1.17 MB
english, 2017