Removal mechanism of 4H- and 6H-SiC substrates (0001 and...

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ARCHIVE Proceedings of the Institution of Mechanical Engineers Part B Journal of Engineering Manufacture 1989-1996 (vols 203-210) 2017 / 08

Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining

Lu, Jing, Luo, Qiufa, Xu, Xipeng, Huang, Hui, Jiang, Feng
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Language:
english
Journal:
Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture
DOI:
10.1177/0954405417718595
Date:
August, 2017
File:
PDF, 2.81 MB
english, 2017
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