[IEEE 2017 29th International Symposium on Power...

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[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs

Jaeger, Christian, Philippou, Alexander, Ilei, Antonio Ve, Laven, Johannes G., Hartl, Andreas
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Year:
2017
DOI:
10.23919/ISPSD.2017.7988895
File:
PDF, 706 KB
2017
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