[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs
Jaeger, Christian, Philippou, Alexander, Ilei, Antonio Ve, Laven, Johannes G., Hartl, AndreasYear:
2017
DOI:
10.23919/ISPSD.2017.7988895
File:
PDF, 706 KB
2017