[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - High uniformity, low-power HfOx-based RRAM enable by a heterogeneous CeO2-Nb:SrTiO3 interface
Hong-Bin Zhao,, Hai-Ling Tu,, Feng Wei,, Yu -Hua Xiong,, Zhi-Min Yang,, Jun Du,Year:
2016
Language:
english
DOI:
10.1109/ICSICT.2016.7998669
File:
PDF, 6.63 MB
english, 2016