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Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC($11\bar{2}0$) heterojunction
Maejima, Naoyuki, Horita, Masahiro, Matsui, Hirosuke, Matsushita, Tomohiro, Daimon, Hiroshi, Matsui, FumihikoVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.085701
Date:
August, 2016
File:
PDF, 1.21 MB
english, 2016