[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - First demonstration of ∼3500 cm 2 /V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

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