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[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - Record low specific contact resistivity (1.2×10 −9 Ω-cm 2 ) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping
Wu, Ying, Luo, Sheng, Wang, Wei, Masudy-Panah, Saeid, Lei, Dian, Gong, Xiao, Liang, Gengchiau, Yeo, Yee-ChiaYear:
2017
Language:
english
DOI:
10.23919/VLSIT.2017.7998178
File:
PDF, 1.29 MB
english, 2017