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Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps)
Hlali, S, Hizem, N, Kalboussi, ALanguage:
english
Journal:
Bulletin of Materials Science
DOI:
10.1007/s12034-017-1443-8
Date:
August, 2017
File:
PDF, 1.71 MB
english, 2017