Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
Andreev, A. A., Vavilova, E. A., Ezubchenko, I. S., Zanaveskin, M. L., Maiboroda, I. O.Volume:
62
Language:
english
Journal:
Technical Physics
DOI:
10.1134/S1063784217080035
Date:
August, 2017
File:
PDF, 402 KB
english, 2017