A new DG nanoscale TFET based on MOSFETs by using source...

Journal of the Korean Physical Society 2017 / 8 Vol. 71; Iss. 4

A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

Ramezani, Zeinab, Orouji, Ali A.
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Volume:
71
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.71.215
Date:
August, 2017
File:
PDF, 700 KB
english, 2017
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