Characterization technique for inhomogeneous 4H-SiC...

Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Brezeanu, G., Pristavu, G., Draghici, F., Badila, M., Pascu, R.
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Volume:
122
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4999296
Date:
August, 2017
File:
PDF, 2.25 MB
english, 2017
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