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30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications
Murugapandiyan, P., Ravimaran, S., William, J.Volume:
38
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/38/8/084001
Date:
August, 2017
File:
PDF, 1.81 MB
english, 2017