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Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry
Diallo, M. L., Diallo, L., Fnidiki, A., Lechevallier, L., Cuvilly, F., Blum, I., Viret, M., Marteau, M., Eyidi, D., Juraszek, J., Declémy, A.Volume:
122
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4992102
Date:
August, 2017
File:
PDF, 1.31 MB
english, 2017